Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible model

• Main Authors: Chuan, Mu Wen, Riyadi, Munawar Agus, Hamzah, Afiq, Alias, Nurul Ezaila, Mohamed Sultan, Suhana, Lim, Cheng Siong, Tan, Michael Loong Peng
• Format: Article
• Language: English
• Published: Public Library of Science 2022
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/103651/1/TanLoongPeng2022_DevicePerformancesAnalysisofPType.pdf; http://eprints.utm.my/103651/; http://dx.doi.org/10.1371/journal.pone.0264483

Moore's Law is approaching its end as transistors are scaled down to tens or few atoms per device, researchers are actively seeking for alternative approaches to leverage more-than- Moore nanoelectronics. Substituting the channel material of a field-effect transistors (FET) with silicene is for...