Stability improvement of an efficient graphene nanoribbon field-effect transistor-based sram design

• Main Authors: Mathan, N., Subbiah, J., Alias, N. E., Tan, M. L. P.
• Format: Article
• Language: English
• Published: Hindawi Limited 2020
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/87033/1/TanLoongPeng2020_StabilityImprovementofanEfficientGraphene.pdf; http://eprints.utm.my/id/eprint/87033/; http://www.dx.doi.org/10.1155/2020/7608279

The development of the nanoelectronics semiconductor devices leads to the shrinking of transistors channel into nanometer dimension. However, there are obstacles that appear with downscaling of the transistors primarily various short-channel effects. Graphene nanoribbon field-effect transistor (GNRF...