Characterization of vertical strained SiGe impact ionization MOSFET for ultra-sensitive biosensor application
This paper venture into prospective ideas of finding viable solution of nanoelectronics device design by an assessment of incorporating vertical impact-ionization MOSFET (IMOS) with strained SiGe technology into a formation of an emerging device structure with elevated performance and reliable outco...
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Main Authors: | Saad, Ismail, Hamzah, Mohd. Zuhir, Seng, Chanbun, Khairul, A. M., Ghosh, Bablu, Bolong, Nurmin, Ismail, Razali |
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Format: | Article |
Published: |
Institute of Electrical and Electronics Engineers Inc.
2014
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Online Access: | http://eprints.utm.my/id/eprint/52106/ http://dx.doi.org/10.1109/SMELEC.2014.6920819 |
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