Holes mobility enhancement using strained silicon, SiGe technology / Ahmad Sabirin Zoolfakar and Hashimah Hashim
In this project, the hole mobility enhancement of PMOS are studied using SiGe technology. Silicon Germanium (SiGe) are used to increase drive current or hole mobility in the drain and source region. The performance improvements of devices with a gate length of 0.9 urn, 0.8 \im and 0.7 \im were consi...
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| Main Authors: | , |
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| Format: | Research Reports |
| Language: | English |
| Published: |
2009
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| Subjects: | |
| Online Access: | https://ir.uitm.edu.my/id/eprint/47700/1/47700.pdf https://ir.uitm.edu.my/id/eprint/47700/ |
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