High performance of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well
Silicon-on-insulator (SOI) based SiGe quantum well infrared pin photodiode has the potential of being a serious candidate for applications in sensing applications as well as in optical fiber communications. The present work investigates the performance of a virtual lateral PIN photodiode with a SiGe...
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| 主要な著者: | , , , |
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| フォーマット: | |
| 出版事項: |
2017
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| オンライン･アクセス: | http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5223 |
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