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Gain investigation for commercial GaAs and SiGe HBT LNA's under electron irradiation

In this paper, a characterization and comparison between the effects of Electron irradiation on low noise amplifiers (LNAs) implemented in a Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) and Gallium-Arsenide (GaAs) HBT technologies, respectively, was carried out. Previous studies...

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Bibliographic Details
Main Authors: Youssouf, Abdouraouf S., Habaebi, Mohamed Hadi, Ibrahim, S.Noorjannah, Hasbullah, Nurul Fadzlin
Format: Conference or Workshop Item
Language:English
English
English
Published: IEEE 2017
Subjects:
TK5101 Telecommunication. Including telegraphy, radio, radar, television
Online Access:http://irep.iium.edu.my/54043/14/54043-edited.pdf
http://irep.iium.edu.my/54043/20/54043-Gain%20investigation%20for%20commercial%20GaAs%20and%20SiGe%20HBT%20LNA%27s%20under%20electron%20irradiation_SCOPUS.pdf
http://irep.iium.edu.my/54043/26/54043_wos.pdf
http://irep.iium.edu.my/54043/
http://ieeexplore.ieee.org/document/7810094/
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Internet

http://irep.iium.edu.my/54043/14/54043-edited.pdf
http://irep.iium.edu.my/54043/20/54043-Gain%20investigation%20for%20commercial%20GaAs%20and%20SiGe%20HBT%20LNA%27s%20under%20electron%20irradiation_SCOPUS.pdf
http://irep.iium.edu.my/54043/26/54043_wos.pdf
http://irep.iium.edu.my/54043/
http://ieeexplore.ieee.org/document/7810094/

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