Taguchi optimization of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well

Silicon-on-insulator (SOI) based SiGe quantum well infrared pin photodiode has the potential of being a serious candidate for applications in sensing applications as well as in optical fiber communications. The objective of this paper is to optimize the process parameters for a SOI-based lateral PIN...

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Bibliographic Details
Main Authors: Menon, P.S., Tasirin, S.K., Ahmad, I., Islam, S., Abdullah, S.F.
Format: Article
Language:English
Published: 2017
Online Access:http://dspace.uniten.edu.my:80/jspui/handle/123456789/5215
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