Taguchi optimization of a SiGe/Si quantum dot SOI-based lateral PIN photodiode

A high performance lateral silicon photodiode was designed on a Silicon-on-insulator (SOI)-based substrate with SiGe/Si quantum dot technology. The device has the potential of being a serious candidate for applications in sensing applications as well as in optical fiber communications. Five device p...

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Bibliographic Details
Main Authors: Menon, P.S., Tasirin, S.K., Ahmad, I., Abdullah, S.F.
Format: Conference Proceeding
Language:English
Published: 2017
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