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The role of selective pattern etching to improve the Ohmic contact resistance and device performance of AlGaN/GaN HEMTs

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Main Authors:	A., Dhongde, S., Taking, M., Elksne, S., Samanta, A., Ofiare, K., Karami, A., Al-Khalidi, E., Wasige
其他作者:	a.dhongde.1@research.gla.ac.uk
格式:	Article
語言:	English
出版:	Universiti Malaysia Perlis (UniMAP) 2022
主題:	AlGaN/GaN Etching high electron mobility transistors (HEMTs) Ohmic contact
在線閱讀:	http://dspace.unimap.edu.my:80/xmlui/handle/123456789/75226
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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