The role of selective pattern etching to improve the Ohmic contact resistance and device performance of AlGaN/GaN HEMTs

• Main Authors: A., Dhongde, S., Taking, M., Elksne, S., Samanta, A., Ofiare, K., Karami, A., Al-Khalidi, E., Wasige
• Other Authors: [e-mail]
• Format: Article
• Language: English
• Published: Universiti Malaysia Perlis (UniMAP) 2022
• Subjects: AlGaN/GaN; Etching high electron mobility transistors (HEMTs); Ohmic contact
• Online Access: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/75226

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