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The role of selective pattern etching to improve the Ohmic contact resistance and device performance of AlGaN/GaN HEMTs

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Main Authors: A., Dhongde, S., Taking, M., Elksne, S., Samanta, A., Ofiare, K., Karami, A., Al-Khalidi, E., Wasige
Other Authors: a.dhongde.1@research.gla.ac.uk
Format: Article
Language:English
Published: Universiti Malaysia Perlis (UniMAP) 2022
Subjects:
AlGaN/GaN
Etching high electron mobility transistors (HEMTs)
Ohmic contact
Online Access:http://dspace.unimap.edu.my:80/xmlui/handle/123456789/75226
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spelling my.unimap-752262022-05-13T08:28:44Z The role of selective pattern etching to improve the Ohmic contact resistance and device performance of AlGaN/GaN HEMTs A., Dhongde S., Taking M., Elksne S., Samanta A., Ofiare K., Karami A., Al-Khalidi E., Wasige a.dhongde.1@research.gla.ac.uk AlGaN/GaN Etching high electron mobility transistors (HEMTs) Ohmic contact Link to publisher's homepage at http://ijneam.unimap.edu.my In this work, we report the processing and DC performance of fabricated AlGaN/GaN HEMT devices using 3 different patterned Ohmic contact structures. The types of Ohmic contact patterns used are horizontal, vertical and chess. A device with a conventional Ohmic contact was also fabricated for comparison. Two different etch depths were investigated, a ~ 9 nm and ~ 30 nm for a shallow and deep Ohmic recess etching, respectively. The lowest contact resistance of 0.32 Ω.mm was observed for a deep horizontal patterned structure. The fabricated device with this structure also demonstrated the highest maximum saturation drain current of 1285 mA/mm and maximum transconductance of 296 mS/mm compared to other devices. The horizontal patterned structure utilizes the uneven AlGaN layer thickness underneath the Ohmic metal contacts. The formation of sidewall areas on AlGaN surface during the patterned etching process provides better contact of Ohmic metal resulting in more tunnelling current between the Ohmic metal and AlGaN barrier thus reducing the contact resistance. This approach also provides the lowest contact resistance due to removal of AlGaN barrier layer (patterned etching) and it is in parallel with the lateral current of the 2DEG resulting in better tunnelling current compared to the vertical and chess patterned structures. The contact resistance can be further improved by optimization the etching depth prior to Ohmic metal deposition. The results indicate the potential of the Ohmic patterned etching structure to further improving the performance of GaN devices. 2022-05-13T08:28:44Z 2022-05-13T08:28:44Z 2021-12 Article International Journal of Nanoelectronics and Materials, vol.14 (Special Issue), 2021, pages 21-28 1985-5761 (Printed) 1997-4434 (Online) http://dspace.unimap.edu.my:80/xmlui/handle/123456789/75226 http://ijneam.unimap.edu.my en Universiti Malaysia Perlis (UniMAP)
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic AlGaN/GaN
Etching high electron mobility transistors (HEMTs)
Ohmic contact
spellingShingle AlGaN/GaN
Etching high electron mobility transistors (HEMTs)
Ohmic contact
A., Dhongde
S., Taking
M., Elksne
S., Samanta
A., Ofiare
K., Karami
A., Al-Khalidi
E., Wasige
The role of selective pattern etching to improve the Ohmic contact resistance and device performance of AlGaN/GaN HEMTs
description Link to publisher's homepage at http://ijneam.unimap.edu.my
author2 a.dhongde.1@research.gla.ac.uk
author_facet a.dhongde.1@research.gla.ac.uk
A., Dhongde
S., Taking
M., Elksne
S., Samanta
A., Ofiare
K., Karami
A., Al-Khalidi
E., Wasige
format Article
author A., Dhongde
S., Taking
M., Elksne
S., Samanta
A., Ofiare
K., Karami
A., Al-Khalidi
E., Wasige
author_sort A., Dhongde
title The role of selective pattern etching to improve the Ohmic contact resistance and device performance of AlGaN/GaN HEMTs
title_short The role of selective pattern etching to improve the Ohmic contact resistance and device performance of AlGaN/GaN HEMTs
title_full The role of selective pattern etching to improve the Ohmic contact resistance and device performance of AlGaN/GaN HEMTs
title_fullStr The role of selective pattern etching to improve the Ohmic contact resistance and device performance of AlGaN/GaN HEMTs
title_full_unstemmed The role of selective pattern etching to improve the Ohmic contact resistance and device performance of AlGaN/GaN HEMTs
title_sort role of selective pattern etching to improve the ohmic contact resistance and device performance of algan/gan hemts
publisher Universiti Malaysia Perlis (UniMAP)
publishDate 2022
url http://dspace.unimap.edu.my:80/xmlui/handle/123456789/75226
_version_ 1738511722196500480
score 13.214268

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