Formation of germanium oxynitride as buffer layer on germanium substrate / Soh Wee Chen
Thermal oxynitridation process was used to grow germanium oxynitride, GeON thin films as a buffer layer on the germanium substrates in nitrous oxide (N2O) gas ambient at several temperatures: 400 °C, 500 °C and 600 °C. The physical and chemical properties of the buffer layers formed were characteriz...
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| Format: | Thesis |
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2018
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| Online Access: | http://studentsrepo.um.edu.my/9656/1/Soh_Wee_Chen.jpg http://studentsrepo.um.edu.my/9656/8/Master_Dissertation_(SOH_WEE_CHEN).pdf http://studentsrepo.um.edu.my/9656/ |
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