Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium

• Main Authors: Sahari S.K., Kashif M., Sutan N.M., Embong Z., Nik Zaini Fathi N.A.F., Hamzah A.A., Sapawi R., Majlis B.Y., Ahmad I.
• Other Authors: 16022924700
• Format: Article
• Published: Emerald Group Publishing Ltd. 2023

Chemical cleaning; Deposition; Field effect transistors; Germanium oxides; Growth kinetics; Hafnium; Metal insulator boundaries; Photoelectrons; Photons; Sputtering; X ray photoelectron spectroscopy; Deposition time; Design/methodology/approach; Equivalent oxide thickness; Ge substrates; Interfacial...