Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium

• Main Authors: Siti Kudnie, Sahari, Muhammad, Kashif, Norsuzailina, Mohamed Sutan, Zaidi, Embong, Nik Amni Fathi, Nik Zaini Fathi, Azrul Azlan, Hamzah, Rohana, Sapawi, Burhanuddin, Yeop Majlis, Ibrahim, Ahmad
• Format: Article
• Language: English
• Published: Emerald Publishing Limited 2017
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://ir.unimas.my/id/eprint/16683/1/Sahari.pdf; http://ir.unimas.my/id/eprint/16683/; http://www.emeraldinsight.com/doi/full/10.1108/MI-12-2015-0099

Purpose – The quality of GeOx–Ge interface and the equivalent oxide thickness (EOT) are the main issues in fabricating high-k/Ge gate stack due to the low-k of GeOx interfacial layer (IL). Therefore, a precise study of the formation of GeOx IL and its contribution to EOT is of utmost importance. I...