Effect of Substrate Orientation on the Growth of Germanium Oxide in Dry Oxygen Ambience
The present investigation deals with the effect of substrate orientation effect on the growth of thermally oxidized Ge. The thermal oxidation was performed at temperature between 375 and 550°C in dry oxygen ambient under atmospheric pressure. The thickness of thermally oxidized Ge films was measured...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing Ltd
2017
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| Subjects: | |
| Online Access: | http://ir.unimas.my/id/eprint/17014/1/Sawawi.pdf http://ir.unimas.my/id/eprint/17014/ http://iopscience.iop.org/1757-899X/201/1/012024 |
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