Germanium Oxidation
Scaling down of the planar bulk silicon (Si) metal-oxide-semiconductor (MOS) field effect transistors (FETs) has been confronted its fundamental limit associated with performance, on current, power consumption, and short-channel effects which have the trade-off relationship with each other. Therefo...
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| Format: | Book |
| Language: | English |
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UNIMAS Publisher
2021
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| Online Access: | http://ir.unimas.my/id/eprint/35961/1/Germanium%20Oxidation%206pgs.pdf http://ir.unimas.my/id/eprint/35961/ https://www.publisher.unimas.my/index.php/online-book-shop |
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