Formation of germanium oxynitride as buffer layer on germanium substrate / Soh Wee Chen

Thermal oxynitridation process was used to grow germanium oxynitride, GeON thin films as a buffer layer on the germanium substrates in nitrous oxide (N2O) gas ambient at several temperatures: 400 °C, 500 °C and 600 °C. The physical and chemical properties of the buffer layers formed were characteriz...

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Bibliographic Details
Main Author: Soh, Wee Chen
Format: Thesis
Published: 2018
Subjects:
Online Access:http://studentsrepo.um.edu.my/9656/1/Soh_Wee_Chen.jpg
http://studentsrepo.um.edu.my/9656/8/Master_Dissertation_(SOH_WEE_CHEN).pdf
http://studentsrepo.um.edu.my/9656/
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