Optimization of ion implantation using trim software for the formation of shallow n+/p junction in germanium substrate

Silicon (Si) device down-scaling is facing a big challenge to maintain its high drive current capability along with lower leakage current. Due to its similarities with Si, the interest has been focused on Germanium (Ge) as a substitute for device substrate. However, there are major problems in fabri...

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Bibliographic Details
Main Authors: Abdul Aziz, Umar, Nur Farhana Arissa, Nur Farhana Arissa, Aid, Siti Rahmah, Yahaya, Hafizal, Centeno, Anthony, Matsumoto, Satoru, Uedono, Akira, Mcphail, David
Format: Conference or Workshop Item
Language:English
Published: 2015
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Online Access:http://eprints.utm.my/id/eprint/63400/1/SatoruMatsumoto2015_OptimizationofIonImplantationUsingTrimSoftware.pdf
http://eprints.utm.my/id/eprint/63400/
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