Crystallization of electrodeposited germanium thin film on silicon (100)

We report the crystallization of electrodeposited germanium (Ge) thin films on n-silicon (Si) (100) by rapid melting process. The electrodeposition was carried out in germanium (IV) chloride: propylene glycol (GeCl4:C3H8O2) electrolyte with constant current of 50 mA for 30 min. The measured Raman sp...

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Bibliographic Details
Main Authors: Zainal Abidin, Mastura Shafinaz, Matsumura, Ryo, Anisuzzaman, Mohammad, Park, Jong-Hyeok, Muta, Shunpei, Mahmood, Mohamad Rusop, Sadoh, Taizoh, Hashim, Abdul Manaf
Format: Article
Language:English
Published: 2013
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Online Access:http://eprints.utm.my/id/eprint/49005/1/MasturaShafinazZainal2013_Crystallizationofelectrodepositedgermanium.pdf
http://eprints.utm.my/id/eprint/49005/
http://dx.doi.org/10.3390/ma6115047
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