Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium
Purpose -The quality of GeOx-Ge interface and the equivalent oxide thickness (EOT) are the main issues in fabricating high-k/Ge gate stack due to the low-k of GeOx interfacial layer (IL). Therefore, a precise study of the formation of GeOx IL and its contribution to EOT is of utmost importance. In t...
Saved in:
Main Authors: | , , , , , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
2017
|
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|