Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium

Purpose -The quality of GeOx-Ge interface and the equivalent oxide thickness (EOT) are the main issues in fabricating high-k/Ge gate stack due to the low-k of GeOx interfacial layer (IL). Therefore, a precise study of the formation of GeOx IL and its contribution to EOT is of utmost importance. In t...

Full description

Saved in:
Bibliographic Details
Main Authors: Sahari, S.K., Kashif, M., Sutan, N.M., Embong, Z., Nik Zaini Fathi, N.A.F., Hamzah, A.A., Sapawi, R., Majlis, B.Y., Ahmad, I.
Format: Article
Language:English
Published: 2017
Tags: Add Tag
No Tags, Be the first to tag this record!