Wet chemical cleaning effect on the formation of ultrathin interfacial layer between Germanium (Ge) and high-k dielectric

• Main Authors: Siti Kudnie, Sahari, Nik Amni Fathi, Nik Zaini Fathi, Norsuzailina, Mohammad Sutan, Rohana, Sapawi
• Format: E-Article
• Language: English
• Published: Institute of Electrical and Electronics Engineers Inc. 2015
• Subjects: TC Hydraulic engineering. Ocean engineering; TP Chemical technology
• Online Access: http://ir.unimas.my/id/eprint/15193/1/Wet-chemical-cleaning-effect-on-the-formation-of-ultrathin-interfacial-layer-between-Germanium-%28Ge%29-and-high-k-dielectric_2015_RSM-2015---2015-IEEE-Regional-Symposium-on-Micro-and-Nano-Electronics%2C-Proceedin.html; http://ir.unimas.my/id/eprint/15193/; https://www.scopus.com/inward/record.uri?eid=2-s2.0-84963860989&doi=10.1109%2fRSM.2015.7355015&partnerID=40&md5=2e41feec1ba73298f81daab61b1e5d2c

This paper investigates and discusses the effect of wet chemical cleaning; Hydrochloric Acid (HCl) and Hydrofluoric Acid (HF) to the growth of interfacial layer between high-k material (Al2O3) and Ge (100) surface. Characterization and morphology techniques using Field Emission Scanning Electron Mic...