Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers
A cooperative transition of antisite As (AsGa) defects in Be-doped low-temperature grown GaAs layers was studied by comparing magnetization of samples with different AsGa+ ions concentrations. With the aid of first principle calculations, the origin of cooperative transitions was shown to be due to...
محفوظ في:
المؤلفون الرئيسيون: | Mohamed, Mohd Ambri, Lam, Pham Tien, Otsuka, N. |
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التنسيق: | مقال |
اللغة: | English |
منشور في: |
Elsevier
2013
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الموضوعات: | |
الوصول للمادة أونلاين: | http://irep.iium.edu.my/29881/1/journal_of_crystal_growth.pdf http://irep.iium.edu.my/29881/ http://dx.doi.org/10.1016/j.jcrysgro.2012.12.070 |
الوسوم: |
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مواد مشابهة
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