Cover Image

Direct exchange interaction of localized spins associated with unpaired sp electrons in Be-doped low-temperature-grown GaAs layers

Beryllium-doped GaAs layers grown at low temperatures by molecular-beam epitaxy contain localized spins associated with unpaired sp electrons of As Ga + ions. Interactions of these localized spins are investigated by measuring the magnetization with a superconducting quantum interference device and...

Full description

Saved in:
Bibliographic Details
Main Authors: Bae, K. W., Mohamed, Mohd Ambri, Jung, DaeWon, Otsuka, Nobuo
Format: Article
Language:English
Published: American Institute of Physics 2011
Subjects:
QC Physics
QD Chemistry
TK7885 Computer engineering
Online Access:http://irep.iium.edu.my/29879/1/Direct_exchange_interaction_of_localized_spins_associated_with_unpaired_sp_electrons_in_Be-doped_lT-GaAs.pdf
http://irep.iium.edu.my/29879/
http://jap.aip.org/resource/1/japiau/v109/i7/p073918_s1
Tags: Add Tag
No Tags, Be the first to tag this record!

Internet

http://irep.iium.edu.my/29879/1/Direct_exchange_interaction_of_localized_spins_associated_with_unpaired_sp_electrons_in_Be-doped_lT-GaAs.pdf
http://irep.iium.edu.my/29879/
http://jap.aip.org/resource/1/japiau/v109/i7/p073918_s1

Similar Items