Evolution of Gaas capping layer on in0.5Ga0.5As/Gaas quantum dots structure
Self-assembled InxGai_xAs/GaAs quantum dots were grown with and without GaAs capping layer. Effect of different growth condition on the capping layer was studied using atomic force microscope (AFM). The optical properties o f capped quantum dots structure was investigated by photoluminescence (PL) m...
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| Main Authors: | , , , |
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| Format: | Article |
| Published: |
2010
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/43971/ |
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