Transition of electron transport process in Be-doped low-temperature-grown GaAs layer
Effects of the structure change of antisite-As (AsGa) defects on the electron transport property in Be-doped low-temperature-grown GaAs layers were investigated. In this material AsGa atoms cooperatively change their positions between substitutional and interstitial sites. We found an abrupt change...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
American Institute of Physics
2013
|
| Subjects: | |
| Online Access: | http://irep.iium.edu.my/31780/2/JAP2013-.pdf http://irep.iium.edu.my/31780/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|