Non-equilibrium critical point in Be-doped low-temperature-grown GaAs
We studied the transition process of antisite arsenic defects in Be-doped low-temperature-grown GaAs layers by measuring the magnetization. This material exhibits bistability at non-equilibrium; at a fixed temperature in a fixed magnetic field a sample relaxes towards two different states, depending...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Institute of Physics
2013
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/29871/1/original_copy_manu_JAP2012.pdf http://irep.iium.edu.my/29871/ http://dx.doi.org/10.1063/1.4790313 |
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