Non-equilibrium critical point in Be-doped low-temperature-grown GaAs
We studied the transition process of antisite arsenic defects in Be-doped low-temperature-grown GaAs layers by measuring the magnetization. This material exhibits bistability at non-equilibrium; at a fixed temperature in a fixed magnetic field a sample relaxes towards two different states, depending...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Institute of Physics
2013
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/29871/1/original_copy_manu_JAP2012.pdf http://irep.iium.edu.my/29871/ http://dx.doi.org/10.1063/1.4790313 |
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| Summary: | We studied the transition process of antisite arsenic defects in Be-doped low-temperature-grown
GaAs layers by measuring the magnetization. This material exhibits bistability at non-equilibrium;
at a fixed temperature in a fixed magnetic field a sample relaxes towards two different states,
depending on the preceding cooling process. We observed anomalously large magnetization
fluctuations in macroscopic samples during the transition from bistability to monostability with
gradual change of the temperature. Slowing down of the relaxation of the magnetization is
observed as a sample approaches the transition into monostability. Large fluctuations observed
from a two-piece sample exhibit intermittent bursts by high-pass filtering and follow a generalized
Gumbel probability density distribution. These observations suggest a possibility of the occurrence
of a non-equilibrium critical point in this material. Microscopic processes underlying the observed
phenomena are discussed with results of first-principles calculations of strain fields. VC 2013
American Institute of Physics. |
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