Effects of Output Low Impedance Termination to Linearity of GaAs HBT Power Amplifier
Improving linearity over a broad band is a major goal in RF design. This paper demonstrates that adding a low impedance termination at the envelope frequency (2 – 1) to the output of a gallium Arsenide (GaAs) Heterojunction Bipolar Transistor (HBT) distributed amplifier (DA) improves the third o...
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| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Published: |
2010
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| Subjects: | |
| Online Access: | http://eprints.utp.edu.my/4754/1/ICIAS_KMH_28-4-10.pdf http://eprints.utp.edu.my/4754/ |
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