Effects of post-deposition annealing temperatures on the composition of interfacial layer at Germanium (Ge)/Aluminium Oxide (Al2O3)

• Main Authors: Sahari, Siti Kudnie, Nik Zaini Fathi, Nik Amni Fathi, Hamzah, Azrul Azlan, Mohamed Sutan, Norsuzailina, Embong, Zaidi, Mohamed Sultan, Suhana, Kashif, Muhammad, Sawawi, Marini, Hasanah, Lilik, Sapawi, Rohana, Kipli, Kuryati, Kram, Abdul Rahman, Junaidi, Nazreen
• Format: Article
• Language: English
• Published: Penerbit UKM 2019
• Subjects: TA Engineering (General). Civil engineering (General); TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/88993/1/SuhanaMohamedSultan2019_EffectsofPostDepositionAnnealingTemperatures.pdf; http://eprints.utm.my/id/eprint/88993/; http://dx.doi.org/10.17576/jsm-2019-4806-06

The understanding of chemical bonding structure of high k dielectrics/Germanium (Ge) interface is upmost importance in order to form a good quality dielectric/Ge interface in fabricating Ge metal oxide semiconductor field effect transistor (MOSFETs). In addition, there is still no detail explanation...