Effects of post-deposition annealing temperatures on the composition of interfacial layer at Germanium (Ge)/Aluminium Oxide (Al2O3)
The understanding of chemical bonding structure of high k dielectrics/Germanium (Ge) interface is upmost importance in order to form a good quality dielectric/Ge interface in fabricating Ge metal oxide semiconductor field effect transistor (MOSFETs). In addition, there is still no detail explanation...
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my.utm.889932021-01-26T08:36:31Z http://eprints.utm.my/id/eprint/88993/ Effects of post-deposition annealing temperatures on the composition of interfacial layer at Germanium (Ge)/Aluminium Oxide (Al2O3) Sahari, Siti Kudnie Nik Zaini Fathi, Nik Amni Fathi Hamzah, Azrul Azlan Mohamed Sutan, Norsuzailina Embong, Zaidi Mohamed Sultan, Suhana Kashif, Muhammad Sawawi, Marini Hasanah, Lilik Sapawi, Rohana Kipli, Kuryati Kram, Abdul Rahman Junaidi, Nazreen TA Engineering (General). Civil engineering (General) TK Electrical engineering. Electronics Nuclear engineering The understanding of chemical bonding structure of high k dielectrics/Germanium (Ge) interface is upmost importance in order to form a good quality dielectric/Ge interface in fabricating Ge metal oxide semiconductor field effect transistor (MOSFETs). In addition, there is still no detail explanation on the interfacial growth of dielectrics/Ge under the influenced of different temperature of post deposition anneal. In current work, the effects of post deposition anneal (PDA) temperature between 400°C and 600°C on the chemical composition of interfacial layer between Ge and Al2O3 were examined by X-ray photoelectron spectroscopy (XPS). Investigation on thermal stability and structural characteristics for gate structure of Al2O3 dielectric grown on Ge by RF sputtering was done by analyzing X-ray photoelectron spectroscopy (XPS) spectra. It is observed that the oxygen deficient region in interfacial layer (IL) is enhanced rather than fully oxidized Al2O3 with increased PDA temperatures. These undesired phenomena caused shrinkage of IL at Ge/Al2O3 interface at higher temperature of 600°C. Penerbit UKM 2019-06 Article PeerReviewed application/pdf en http://eprints.utm.my/id/eprint/88993/1/SuhanaMohamedSultan2019_EffectsofPostDepositionAnnealingTemperatures.pdf Sahari, Siti Kudnie and Nik Zaini Fathi, Nik Amni Fathi and Hamzah, Azrul Azlan and Mohamed Sutan, Norsuzailina and Embong, Zaidi and Mohamed Sultan, Suhana and Kashif, Muhammad and Sawawi, Marini and Hasanah, Lilik and Sapawi, Rohana and Kipli, Kuryati and Kram, Abdul Rahman and Junaidi, Nazreen (2019) Effects of post-deposition annealing temperatures on the composition of interfacial layer at Germanium (Ge)/Aluminium Oxide (Al2O3). Sains Malaysiana, 48 (6). pp. 1195-1199. ISSN 0126-6039 http://dx.doi.org/10.17576/jsm-2019-4806-06 DOI:10.17576/jsm-2019-4806-06 |
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TA Engineering (General). Civil engineering (General) TK Electrical engineering. Electronics Nuclear engineering Sahari, Siti Kudnie Nik Zaini Fathi, Nik Amni Fathi Hamzah, Azrul Azlan Mohamed Sutan, Norsuzailina Embong, Zaidi Mohamed Sultan, Suhana Kashif, Muhammad Sawawi, Marini Hasanah, Lilik Sapawi, Rohana Kipli, Kuryati Kram, Abdul Rahman Junaidi, Nazreen Effects of post-deposition annealing temperatures on the composition of interfacial layer at Germanium (Ge)/Aluminium Oxide (Al2O3) |
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The understanding of chemical bonding structure of high k dielectrics/Germanium (Ge) interface is upmost importance in order to form a good quality dielectric/Ge interface in fabricating Ge metal oxide semiconductor field effect transistor (MOSFETs). In addition, there is still no detail explanation on the interfacial growth of dielectrics/Ge under the influenced of different temperature of post deposition anneal. In current work, the effects of post deposition anneal (PDA) temperature between 400°C and 600°C on the chemical composition of interfacial layer between Ge and Al2O3 were examined by X-ray photoelectron spectroscopy (XPS). Investigation on thermal stability and structural characteristics for gate structure of Al2O3 dielectric grown on Ge by RF sputtering was done by analyzing X-ray photoelectron spectroscopy (XPS) spectra. It is observed that the oxygen deficient region in interfacial layer (IL) is enhanced rather than fully oxidized Al2O3 with increased PDA temperatures. These undesired phenomena caused shrinkage of IL at Ge/Al2O3 interface at higher temperature of 600°C. |
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Article |
author |
Sahari, Siti Kudnie Nik Zaini Fathi, Nik Amni Fathi Hamzah, Azrul Azlan Mohamed Sutan, Norsuzailina Embong, Zaidi Mohamed Sultan, Suhana Kashif, Muhammad Sawawi, Marini Hasanah, Lilik Sapawi, Rohana Kipli, Kuryati Kram, Abdul Rahman Junaidi, Nazreen |
author_facet |
Sahari, Siti Kudnie Nik Zaini Fathi, Nik Amni Fathi Hamzah, Azrul Azlan Mohamed Sutan, Norsuzailina Embong, Zaidi Mohamed Sultan, Suhana Kashif, Muhammad Sawawi, Marini Hasanah, Lilik Sapawi, Rohana Kipli, Kuryati Kram, Abdul Rahman Junaidi, Nazreen |
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Sahari, Siti Kudnie |
title |
Effects of post-deposition annealing temperatures on the composition of interfacial layer at Germanium (Ge)/Aluminium Oxide (Al2O3) |
title_short |
Effects of post-deposition annealing temperatures on the composition of interfacial layer at Germanium (Ge)/Aluminium Oxide (Al2O3) |
title_full |
Effects of post-deposition annealing temperatures on the composition of interfacial layer at Germanium (Ge)/Aluminium Oxide (Al2O3) |
title_fullStr |
Effects of post-deposition annealing temperatures on the composition of interfacial layer at Germanium (Ge)/Aluminium Oxide (Al2O3) |
title_full_unstemmed |
Effects of post-deposition annealing temperatures on the composition of interfacial layer at Germanium (Ge)/Aluminium Oxide (Al2O3) |
title_sort |
effects of post-deposition annealing temperatures on the composition of interfacial layer at germanium (ge)/aluminium oxide (al2o3) |
publisher |
Penerbit UKM |
publishDate |
2019 |
url |
http://eprints.utm.my/id/eprint/88993/1/SuhanaMohamedSultan2019_EffectsofPostDepositionAnnealingTemperatures.pdf http://eprints.utm.my/id/eprint/88993/ http://dx.doi.org/10.17576/jsm-2019-4806-06 |
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