Surface and interface characteristics of annealed ZrO2/Ge oxide-semiconductor structure in argon ambient
ZrO2 thin film of 5 nm has been thermally oxidized from metallic Zr on Ge in oxygen ambient at 500 degrees C for 15 min. The effects of post-oxidation annealing temperature (400 degrees C-800 degrees C) on the surface and interface characteristics of the ZrO2 thin films on Ge semiconductor wafer sub...
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| Main Authors: | , , |
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| Format: | Article |
| Published: |
Elsevier
2021
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| Subjects: | |
| Online Access: | http://eprints.um.edu.my/26973/ |
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