Compact device modelling of interface trap charges with quantum capacitance in mos2-based field-effect transistors
An effective way to obtain interface trap density in transition metal dichalcogenide field-effect transistors (FETs) via compact device modelling is presented in this study. A computationally efficient model is utilised to evaluate the interface trap charges in a MoS2-based FET device. This model im...
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Main Authors: | Leong, C. H., Chuan, M. W., Wong, K. L., Najam, F., Yu, Y. S., Tan, M. L. P. |
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Format: | Article |
Published: |
Institute of Physics Publishing
2020
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Online Access: | http://eprints.utm.my/id/eprint/86542/ https://dx.doi.org/10.1088/1361-6641/ab74f2 |
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