Compact device modelling of interface trap charges with quantum capacitance in mos2-based field-effect transistors

• Main Authors: Leong, C. H., Chuan, M. W., Wong, K. L., Najam, F., Yu, Y. S., Tan, M. L. P.
• Format: Article
• Published: Institute of Physics Publishing 2020
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/86542/; https://dx.doi.org/10.1088/1361-6641/ab74f2

An effective way to obtain interface trap density in transition metal dichalcogenide field-effect transistors (FETs) via compact device modelling is presented in this study. A computationally efficient model is utilised to evaluate the interface trap charges in a MoS2-based FET device. This model im...