Compact device modelling of interface trap charges with quantum capacitance in mos2-based field-effect transistors

An effective way to obtain interface trap density in transition metal dichalcogenide field-effect transistors (FETs) via compact device modelling is presented in this study. A computationally efficient model is utilised to evaluate the interface trap charges in a MoS2-based FET device. This model im...

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Bibliographic Details
Main Authors: Leong, C. H., Chuan, M. W., Wong, K. L., Najam, F., Yu, Y. S., Tan, M. L. P.
Format: Article
Published: Institute of Physics Publishing 2020
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Online Access:http://eprints.utm.my/id/eprint/86542/
https://dx.doi.org/10.1088/1361-6641/ab74f2
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