Enhanced performance analysis of vertical strained-sige impact ionization MOSFET (VESIMOS)
The Vertical Strained Silicon Germanium (SiGe) Impact Ionization MOSFET (VESIMOS) has been successfully developed and analyzed in this paper. VESIMOS device integrates vertical structure concept of Impact Ionization MOSFET (IMOS) and strained technology. The transfer characteristics of VESIMOS revea...
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Main Authors: | Saad, Ismail, Pogaku, Divya, A. R., Abu Bakar, H., Mohd. Zuhir, Bolon, N., A. M., Khairul, Ghosh, Bablu, Ismai, Razali, Hashim, U. |
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Format: | Conference or Workshop Item |
Published: |
2012
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Subjects: | |
Online Access: | http://eprints.utm.my/id/eprint/39818/ http://dx.doi.org/10.1109/SMElec.2012.6417118 |
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