Position-controlled formation of Si nanopores by chemical vapor deposition of SiC/SOI(100)
We investigated the position-controlled nanopore formation in the surface of thin Si layer of a Silicon on Insulator (SOI) substrate by utilizing chemical vapor deposition (CVD). The Si membrane was obtained by anisotropic etching of the handle wafer. The SiC film growth was carried out from the bac...
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| Main Authors: | , , , , |
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| Format: | Book Section |
| Published: |
SPIE - International Society for Optical Engineering
2011
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/29312/ http://dx.doi.org/10.1117/12.888531 |
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