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Characterization Of SiO2/SiC Interface Of Phosphorous-Doped MOS Capacitors By Conductance Measurements

Interface states of MOS structures capacitors incorporated with low levels of phosphorous have been investigated by conductance and C-ψs method. The frequency response of interface states was observed by the conductance method up to 10 MHz. The correlation between the frequency response of interface...

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Bibliographic Details
Main Authors: Idris, Muhammad Idzdihar, Mohammed Napiah, Zul Atfyi Fauzan, Zainudin, Muhammad Noorazlan Shah, Mohd Chachuli, Siti Amaniah, Rashid, Marzaini
Format: Article
Language:English
Published: Blue Eyes Intelligence Engineering and Sciences Publication 2019
Online Access:http://eprints.utem.edu.my/id/eprint/24544/2/IJRTE_M.I.IDRIS.PDF
http://eprints.utem.edu.my/id/eprint/24544/
https://www.ijrte.org/wp-content/uploads/papers/v8i3/C5316098319.pdf
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http://eprints.utem.edu.my/id/eprint/24544/2/IJRTE_M.I.IDRIS.PDF
http://eprints.utem.edu.my/id/eprint/24544/
https://www.ijrte.org/wp-content/uploads/papers/v8i3/C5316098319.pdf

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