Effect of methane flow rate to SiC thin films morphology deposited by VHF-PECVD
Silicon carbide (SiC) thin films have been grown in a very high frequency-plasma enhanced chemical vapour deposition (VHF-PECVD) system designed and developed in our laboratory. Silane (SiH4) and methane (CH4) were used as precursor gases. The effect of methane flow rate on the structural and morpho...
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| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Published: |
ICAMN 2016
2016
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/67080/ http://conference.city/conference.php?e_id=117596 |
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