Carbonization layer grown by acetylene reaction on SI(100) and (111) surface using low pressure chemical vapor deposition

• Main Authors: Hashim, Abdul manaf, Kanji, Yasui
• Format: Article
• Language: English; English
• Published: Penerbit UTM Press 2009
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/13349/1/AbdulManafHashim2009_CarbonizationLayerGrownbyAcetyleneReaction.pdf; http://eprints.utm.my/id/eprint/13349/2/164; http://eprints.utm.my/id/eprint/13349/; http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:67934

Surface carbonization on Si(100) and Si(111) using acetylene as single carbon source was performed in a low-pressure chemical vapor deposition chamber using rapid thermal technique. The dependences of crystallinity, crystal orientation and bonding state of carbonization layer on acetylene flow rates...