Instability of phosphorous doped SiO2 in 4H-SiC MOS capacitors at high temperatures
In this paper, the effect of inclusion of phosphorous (at a concentration below 1%) on the high temperature characteristics (up to 300 ?C) of the SiO2/SiC interface is investigated. Capacitance–voltage measurements taken for a range of frequencies have been utilized to extract parameters including f...
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| Format: | Article |
| Language: | English |
| Published: |
AIP
2016
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| Online Access: | http://eprints.utem.edu.my/id/eprint/18878/1/Instability%20of%20phosphorous%20doped%20SiO2%20in%204H-SiC%20MOS%20capacitors%20at%20high%20temperatures.pdf http://eprints.utem.edu.my/id/eprint/18878/ http://aip.scitation.org/jap/info/focus http://dx.doi.org/10.1063/1.4969050 |
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