Low-pressure synthesis and characterization of multiphase SiC by HWCVD using CH4/SiH4
Silicon carbide (SiC) thin films were deposited by low-pressure hot wire chemical vapor deposition (HWCVD) technique using SiH4 and CH4 gas precursors with no hydrogen dilution. Spectroscopic and structural properties of the films deposited at various methane flow rate (10-100 sccm) and low silane f...
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| Main Authors: | , , , , |
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| Format: | Article |
| Published: |
2012
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| Subjects: | |
| Online Access: | http://eprints.um.edu.my/7363/ |
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