Carbonization layer grown by acetylene reaction on SI(100) and (111) surface using low pressure chemical vapor deposition
Surface carbonization on Si(100) and Si(111) using acetylene as single carbon source was performed in a low-pressure chemical vapor deposition chamber using rapid thermal technique. The dependences of crystallinity, crystal orientation and bonding state of carbonization layer on acetylene flow rates...
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English English |
| Published: |
Penerbit UTM Press
2009
|
| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/13349/1/AbdulManafHashim2009_CarbonizationLayerGrownbyAcetyleneReaction.pdf http://eprints.utm.my/id/eprint/13349/2/164 http://eprints.utm.my/id/eprint/13349/ http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:67934 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|