Heteroepitaxial Growth Of 3C–SiC On Si Substrates By Rapid Thermal Triode Plasma CVD Using Dimethyl silane At Low Temperature

• Main Authors: Hashim, Abdul Manaf, Yasui, Kanji
• Format: Article
• Published: IEEE International Conference on Semiconductor Electronics 2008
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/25949/; http://dx.doi.org/10.1109/SMELEC.2006.380713

The investigation of the dependence of the cubic silicon carbide (3C-SiC) film characteristics on the reaction pressures, growth temperatures and hydrogen dilution rates was carried out by rapid thermal triode plasma CVD using dimethylsilane as a source gas. The stoichiometric 3C-SiC films with good...