Properties of Strain in GaN Layer Grown on Si (100) Substrate and Its Porous Structure

• Main Authors: Waheeda, S. N., Zainal, N., Hassan, Z., Powell, R. E. L., Akimov, A. V., Kent, A. J.
• Format: Conference or Workshop Item
• Language: English
• Published: 2015
• Subjects: QC1-999 Physics
• Online Access: http://eprints.usm.my/48740/1/Section%20C%20160.pdf%20cut.pdf; http://eprints.usm.my/48740/

We report an investigation of strain effects in GaN layer grown on a Si (100) substrate. From temperature dependent PL measurements, it was found that the strain may influence the value of the binding energy of donors and acceptors in the GaN layer. Estimation based on Raman spectroscopy measurem...