Low temperature heteroepitaxial growth of 3C-SiC on Si substrates by rapid thermal triode plasma CVD using dimethylsilane

• Main Authors: Hashim, Abdul Manaf, Yasui, Kanji
• Format: Conference or Workshop Item
• Language: English
• Published: 2006
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/7630/1/Hashim_Abdul_Manaf_2006_Low_Temperature_Heteroepitaxial_Growth_3C-SiC_Si.pdf; http://eprints.utm.my/id/eprint/7630/; http://dx.doi.org/10.1109/SMELEC.2006.380713

The investigation of the dependence of the cubic silicon carbide (3C-SiC) film characteristics on the reaction pressures, growth temperatures and hydrogen dilution rates was carried out by rapid thermal triode plasma CVD using dimethylsilane as a source gas. The stoichiometric 3C-SiC films with good...