Effects of pulse cycle number on the quality of pulsed atomic-layer epitaxy AlN films grown via metal organic chemical vapor deposition

• Main Authors: Rahman, Mohd Nazri Abd, Sulaiman, Abdullah Fadil, Abdul Khudus, Muhammad Imran Mustafa, Allif, Kamarul, Talik, Noor Azrina, Basri, Siti Hajar, Shuhaimi, Ahmad
• Format: Article
• Published: IOP Publishing 2019
• Subjects: Q Science (General); QC Physics
• Online Access: http://eprints.um.edu.my/23703/; https://doi.org/10.7567/1347-4065/ab09d3

The effect of different numbers of Al and N2 pulse cycles on the quality of AlN films prepared via the pulsed atomic-layer epitaxy (PALE) technique and epitaxially deposited on a c-plane sapphire substrate by metal organic chemical vapor deposition were investigated. The characteristics of AlN/sapph...