Crystallinity and Si-H bonding configuration of nc-Si:H films grown by Layer-by-layer (LBL) deposition technique at different RF power

• Main Authors: Tong, G.B., Ab. Ghani, S.M., Abdul Rahman, S.
• Format: Conference or Workshop Item
• Language: English
• Published: 2007
• Subjects: T Technology (General)
• Online Access: http://eprints.um.edu.my/13516/1/0001.pdf; http://eprints.um.edu.my/13516/

A set of hydrogenated nanocrystalline silicon (nc-Si:H) films prepared in a home built plasma enhanced chemical vapour deposition (PECVD) system using the layer by- layer (LBL) deposition technique have been studied. The 13.56 MHz RF power was varied from 20 to 100 W to study the influence of RF po...