Optimization of 14nm horizontal double gate for optimum threshold voltage Using L9 Taguchi method
Silvaco ATHENA TCAD tools are used to model and simulate the electrical properties and characterization of the suggested layout of a 14 nm gate length (Lg) Double Gate Bilayer Graphene Field Effect Transistor (FET). Hafnium Dioxide (HfO2) serves as the high-k material in the negative channel metal o...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
UniMAP Press
2022
|
| Online Access: | http://eprints.utem.edu.my/id/eprint/26767/2/SPECIAL%20ISSUE%20IJNEAM_VOL_15_SI_DECEMBER_2022_255-265.PDF http://eprints.utem.edu.my/id/eprint/26767/ https://ijneam.unimap.edu.my/images/PDF/SPECIAL%20ISSUE%20BOND%202022/Vol_15_SI_December_2022_255-265.pdf |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|