Wide wavelength range and high speed SiGe/Si multi quantum-well silicon-on-insulator-based lateral PIN photodiode
Silicon-on-insulator (SOI)-based silicon germanium (SiGe) multi quantum-well (MQW) infrared PIN photodiode has a broad range of application including infrared sensors as well as in optical fiber communications. In this paper, we present improvement of a virtual lateral PIN photodiode with a SiGe/Si...
Saved in:
Main Authors: | Menon, P.S., Tasirin, S.K., Ahmad, I., Abdullah, S.F. |
---|---|
Format: | Article |
Language: | English |
Published: |
2017
|
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Wide wavelength range and high speed SiGe/Si multi quantum-well silicon-on-insulator-based lateral PIN photodiode
by: Menon P.S., et al.
Published: (2023) -
Taguchi optimization of a SiGe/Si quantum dot SOI-based lateral PIN photodiode
by: Menon, P.S., et al.
Published: (2017) -
Taguchi optimization of a SiGe/Si quantum dot SOI-based lateral PIN photodiode
by: Menon P.S., et al.
Published: (2023) -
High performance of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well
by: Menon, P.S., et al.
Published: (2017) -
High performance of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well
by: Menon P.S., et al.
Published: (2023)