Epitaxial-template structure utilizing Ge-on-insulator stripe arrays with nanospacing for advanced heterogenous integration on SI platform
A possible Ge-on-insulator (GOI) structure, namely, stripe arrays with nanospacing, was proposed as a promising epitaxial template structure for the Ge epitaxial layer. Agglomeration-free single-crystalline GOI stripe arrays with thickness of 50nm and spacing down to 0.5 μm were successfully grown b...
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| Main Authors: | , , , , |
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| Format: | Article |
| Published: |
2012
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/46930/ http://dx.doi.org/10.1143/JJAP.51.06FF04 |
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